SI2324DS-T1-GE3
SI2324DS-T1-GE3
SI2324DS-T1-GE3
  • Transistors - FETs, MOSFETs - Single SI2324DS-T1-GE3
  • Transistors - FETs, MOSFETs - Single SI2324DS-T1-GE3
  • Transistors - FETs, MOSFETs - Single SI2324DS-T1-GE3
SI2324DS-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Electro-Films (EFI) / Vishay
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:SI2324DS-T1-GE3
Description:MOSFET N-CH 100V 2.3A SOT-23
Lead Free Status / RoHS Status:
PackagingTape & Reel (TR)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
Power Dissipation (Max)1.25W (Ta), 2.5W (Tc)
Package / CaseTO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds190pF @ 50V
Other NamesSI2324DS-T1-GE3-ND
SI2324DS-T1-GE3TR
Meta Part NumberSI2324DS-T1-GE3TR-ND
TechnologyMOSFET (Metal Oxide)
Detailed DescriptionN-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Mounting TypeSurface Mount
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.9V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs10.4nC @ 10V
Drain to Source Voltage (Vdss)100V
Rds On (Max) @ Id, Vgs234 mOhm @ 1.5A, 10V
FET TypeN-Channel

Data sheet: Work in prgress, stay tuned!

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