SI2318DS-T1-E3
SI2318DS-T1-E3
SI2318DS-T1-E3
  • Transistors - FETs, MOSFETs - Single SI2318DS-T1-E3
  • Transistors - FETs, MOSFETs - Single SI2318DS-T1-E3
  • Transistors - FETs, MOSFETs - Single SI2318DS-T1-E3
SI2318DS-T1-E3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Electro-Films (EFI) / Vishay
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:SI2318DS-T1-E3
Description:MOSFET N-CH 40V 3A SOT23-3
Lead Free Status / RoHS Status:
Drain to Source Voltage (Vdss)40V
PackagingTape & Reel (TR)
Detailed DescriptionN-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds540pF @ 20V
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
FET Feature-
Package / CaseTO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other NamesSI2318DS-T1-E3TR
SI2318DST1E3
Power Dissipation (Max)750mW (Ta)
FET TypeN-Channel
Vgs(th) (Max) @ Id3V @ 250µA
Meta Part NumberSI2318DS-T1-E3TR-ND
Operating Temperature-55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs45 mOhm @ 3.9A, 10V
Mounting TypeSurface Mount
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Supplier Device PackageSOT-23-3 (TO-236)
Manufacturer Standard Lead Time33 Weeks
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Data sheet: Work in prgress, stay tuned!

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