MT29F4G08ABADAWP-E:D TR
MT29F4G08ABADAWP-E:D TR
MT29F4G08ABADAWP-E:D TR
MT29F4G08ABADAWP-E:D TR
  • Memory MT29F4G08ABADAWP-E:D TR
  • Memory MT29F4G08ABADAWP-E:D TR
  • Memory MT29F4G08ABADAWP-E:D TR
  • Memory MT29F4G08ABADAWP-E:D TR
MT29F4G08ABADAWP-E:D TR
Category
Memory
Manufacturer
Micron Technology
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:MT29F4G08ABADAWP-E:D TR
Description:IC FLASH 4G PARALLEL 48TSOP
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
TechnologyFLASH - NAND
Memory InterfaceParallel
Voltage - Supply2.7 V ~ 3.6 V
Meta Part NumberMT29F4G08ABADAWP-E:DTR-ND
PackagingTape & Reel (TR)
Memory Size4Gb (512M x 8)
Series-
Operating Temperature0°C ~ 70°C (TA)
Write Cycle Time - Word, Page-
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Detailed DescriptionFLASH - NAND Memory IC 4Gb (512M x 8) Parallel
Moisture Sensitivity Level (MSL)3 (168 Hours)
Memory TypeNon-Volatile
Other NamesMT29F4G08ABADAWP-E:D TR-ND
"######"MT29F4G08ABADAWP-E:DTR
Memory FormatFLASH

Data sheet: Work in prgress, stay tuned!

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