MJD122G
MJD122G
MJD122G
MJD122G
  • Transistors - Bipolar (BJT) - Single MJD122G
  • Transistors - Bipolar (BJT) - Single MJD122G
  • Transistors - Bipolar (BJT) - Single MJD122G
  • Transistors - Bipolar (BJT) - Single MJD122G
MJD122G
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
AMI Semiconductor/onsemi
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:MJD122G
Description:TRANS NPN DARL 100V 8A DPAK
Lead Free Status / RoHS Status:
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
Moisture Sensitivity Level (MSL)1 (Unlimited)
Series-
Manufacturer Standard Lead Time15 Weeks
Meta Part NumberMJD122GOS-ND
Power - Max1.75W
Base Part NumberMJD122
Current - Collector Cutoff (Max)10µA
Voltage - Collector Emitter Breakdown (Max)100V
Mounting TypeSurface Mount
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector (Ic) (Max)8A
Operating Temperature-65°C ~ 150°C (TJ)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Other NamesMJD122G-ND
MJD122GOS
PackagingTube
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Frequency - Transition4MHz
Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
Transistor TypeNPN - Darlington

Data sheet: Work in prgress, stay tuned!

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