IPB020N10N5ATMA1
IPB020N10N5ATMA1
IPB020N10N5ATMA1
IPB020N10N5ATMA1
  • Transistors - FETs, MOSFETs - Single IPB020N10N5ATMA1
  • Transistors - FETs, MOSFETs - Single IPB020N10N5ATMA1
  • Transistors - FETs, MOSFETs - Single IPB020N10N5ATMA1
  • Transistors - FETs, MOSFETs - Single IPB020N10N5ATMA1
IPB020N10N5ATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Cypress Semiconductor (Infineon Technologies)
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:IPB020N10N5ATMA1
Description:MOSFET N-CH 100V 120A TO263-3
Lead Free Status / RoHS Status:
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Meta Part NumberIPB020N10N5ATMA1CT-ND
Moisture Sensitivity Level (MSL)1 (Unlimited)
FET Feature-
Drain to Source Voltage (Vdss)100V
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 270µA
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed DescriptionN-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263AB)
Power Dissipation (Max)375W (Tc)
Supplier Device PackageD²PAK (TO-263AB)
Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
SeriesOptiMOS™
Other NamesIPB020N10N5ATMA1CT
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs2 mOhm @ 100A, 10V
PackagingCut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Current - Continuous Drain (Id) @ 25°C120A (Tc)
FET TypeN-Channel
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds15600pF @ 50V

Data sheet: Work in prgress, stay tuned!

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