CY7C1413KV18-250BZC
CY7C1413KV18-250BZC
CY7C1413KV18-250BZC
CY7C1413KV18-250BZC
  • Memory CY7C1413KV18-250BZC
  • Memory CY7C1413KV18-250BZC
  • Memory CY7C1413KV18-250BZC
  • Memory CY7C1413KV18-250BZC
CY7C1413KV18-250BZC
Category
Memory
Manufacturer
Cypress Semiconductor
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:CY7C1413KV18-250BZC
Description:IC SRAM 36M PARALLEL 165FBGA
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Manufacturer Standard Lead Time15 Weeks
Meta Part NumberCY7C1413KV18-250BZC-ND
Voltage - Supply1.7 V ~ 1.9 V
Memory InterfaceParallel
Series-
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Operating Temperature0°C ~ 70°C (TA)
Memory FormatSRAM
Moisture Sensitivity Level (MSL)3 (168 Hours)
Package / Case165-LBGA
Other NamesCY7C1413KV18250BZC
Clock Frequency250MHz
Supplier Device Package165-FBGA (13x15)
PackagingTray
Memory TypeVolatile
TechnologySRAM - Synchronous, QDR II
Detailed DescriptionSRAM - Synchronous, QDR II Memory IC 36Mb (2M x 18) Parallel 250MHz 165-FBGA (13x15)
Write Cycle Time - Word, Page-
Memory Size36Mb (2M x 18)
Mounting TypeSurface Mount
Base Part NumberCY7C1413

Data sheet: Work in prgress, stay tuned!

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