C4H2327N110A
C4H2327N110A
C4H2327N110A
C4H2327N110A
  • Transistors - FETs, MOSFETs - RF C4H2327N110A
  • Transistors - FETs, MOSFETs - RF C4H2327N110A
  • Transistors - FETs, MOSFETs - RF C4H2327N110A
  • Transistors - FETs, MOSFETs - RF C4H2327N110A
C4H2327N110A
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range23002700MHz
PL(3dB)nominal output power at 3 dB gain compression100W
Test signal: 1-c W-CDMA
VDSdrain-source voltagef = 2496 MHz to 2690 MHz [0] [1]50V
Gppower gainf = 2496 MHz to 2690 MHz [0] [1]15dB
ηDdrain efficiencyf = 2496 MHz to 2690 MHz [0] [1]57%
PL(AV)average output powerf = 2496 MHz to 2690 MHz [0] [1]41.5dBm
IDqquiescent drain currentf = 2496 MHz to 2690 MHz [0] [1]50mA
ACPRadjacent channel power ratiof = 2496 MHz to 2690 MHz [0] [1]-27.1dBc

Data sheet: Work in prgress, stay tuned!

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