BLF888E
BLF888E
BLF888E
BLF888E
  • Transistors - FETs, MOSFETs - RF BLF888E
  • Transistors - FETs, MOSFETs - RF BLF888E
  • Transistors - FETs, MOSFETs - RF BLF888E
  • Transistors - FETs, MOSFETs - RF BLF888E
BLF888E
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 470 790 MHz
PL(1dB) nominal output power at 1 dB gain compression 750 W
Test signal: DVB-T (8k OFDM)
VDS drain-source voltage 470-608 MHz band 50 V
Gp power gain 470-608 MHz band 17 dB
ηD drain efficiency 470-608 MHz band 52 %
PL(AV) average output power 470-608 MHz band 150 W
IMDshldr intermodulation distortion shoulder attenuation 470-608 MHz band -38 dBc
PAR peak-to-average ratio 470-608 MHz band 8 dB

Data sheet: Work in prgress, stay tuned!

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