Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon
RoHS
YES
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| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| frange | frequency range | 616 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 600 | W | |||
| Test signal: 1-c W-CDMA @ 925 to 960 MHz | ||||||
| VDS | drain-source voltage | 925 to 960 MHz [0] | 48 | V | ||
| Gp | power gain | 925 to 960 MHz [0] | 17.7 | dB | ||
| ηD | drain efficiency | 925 to 960 MHz [0] | 53.9 | % | ||
| PL(AV) | average output power | 925 to 960 MHz [0] | 50.5 | dBm | ||
| ACPR | adjacent channel power ratio | 925 to 960 MHz [0] | -31.4 [1] | dBc | ||
| Test signal: 1-c W-CDMA @ 869 to 894 MHz | ||||||
| VDS | drain-source voltage | 869 to 894 MHz [2] | 50 | V | ||
| Gp | power gain | 869 to 894 MHz [2] | 18.3 | dB | ||
| ηD | drain efficiency | 869 to 894 MHz [2] | 52.7 | % | ||
| PL(AV) | average output power | 869 to 894 MHz [2] | 50.5 | dBm | ||
| ACPR | adjacent channel power ratio | 869 to 894 MHz [2] | -30.8 [3] | dBc | ||
| Test signal: 1-c W-CDMA @ 758 to 803 MHz | ||||||
| VDS | drain-source voltage | 758 to 803 MHz [4] | 47 | V | ||
| Gp | power gain | 758 to 803 MHz [4] | 17.7 | dB | ||
| ηD | drain efficiency | 758 to 803 MHz [4] | 54.2 | % | ||
| PL(AV) | average output power | 758 to 803 MHz [4] | 50.5 | dBm | ||
| ACPR | adjacent channel power ratio | 758 to 803 MHz [4] | -33.8 [5] | dBc | ||
| Test signal: 1-c W-CDMA @ 729 to 768 MHz | ||||||
| VDS | drain-source voltage | 729 to 768 MHz [6] | 48 | V | ||
| Gp | power gain | 729 to 768 MHz [6] | 17.5 | dB | ||
| ηD | drain efficiency | 729 to 768 MHz [6] | 57.2 | % | ||
| PL(AV) | average output power | 729 to 768 MHz [6] | 50.5 | dBm | ||
| ACPR | adjacent channel power ratio | 729 to 768 MHz [6] | -30.8 [7] | dBc | ||
Data sheet: Work in prgress, stay tuned!
