BLA9H0912L-1200
BLA9H0912L-1200
BLA9H0912L-1200
BLA9H0912L-1200
  • Transistors - FETs, MOSFETs - RF BLA9H0912L-1200
  • Transistors - FETs, MOSFETs - RF BLA9H0912L-1200
  • Transistors - FETs, MOSFETs - RF BLA9H0912L-1200
  • Transistors - FETs, MOSFETs - RF BLA9H0912L-1200
BLA9H0912L-1200
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range9601215MHz
PL(1dB)nominal output power at 1 dB gain compression1200W
Test signal: Pulsed RF
VDSdrain-source voltagePL = 1200 W [0]50V
Gppower gainPL = 1200 W [0]17.819dB
ηDdrain efficiencyPL = 1200 W [0]5760%
RLininput return lossPL = 1200 W [0]-15dB
Pdroop(pulse)pulse droop powerPL = 1200 W [0]0.20.5dB
trrise timePL = 1200 W [0]650ns
tffall timePL = 1200 W [0]650ns
PL(2dB)output power at 2 dB gain compression1400W

Data sheet: Work in prgress, stay tuned!

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