BCP56T1G
BCP56T1G
BCP56T1G
BCP56T1G
  • Transistors - Bipolar (BJT) - Single BCP56T1G
  • Transistors - Bipolar (BJT) - Single BCP56T1G
  • Transistors - Bipolar (BJT) - Single BCP56T1G
  • Transistors - Bipolar (BJT) - Single BCP56T1G
BCP56T1G
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
AMI Semiconductor/onsemi
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

{{title}}
Price not available? Fill in the information below to send a quick RFQ, and we will respond promptly
{{ isClicked ? 'Submitted' : 'Submit RFQ' }}
Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:BCP56T1G
Description:TRANS NPN 80V 1A SOT223
Lead Free Status / RoHS Status:
Transistor TypeNPN
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Base Part NumberBCP56
Other NamesBCP56T1GOSCT
Voltage - Collector Emitter Breakdown (Max)80V
PackagingCut Tape (CT)
Detailed DescriptionBipolar (BJT) Transistor NPN 80V 1A 130MHz 1.5W Surface Mount SOT-223
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time50 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Supplier Device PackageSOT-223
Series-
Current - Collector (Ic) (Max)1A
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Meta Part NumberBCP56T1GOSCT-ND
Power - Max1.5W
Mounting TypeSurface Mount
Frequency - Transition130MHz
Package / CaseTO-261-4, TO-261AA
Operating Temperature-65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max)100nA (ICBO)

Data sheet: Work in prgress, stay tuned!

Close
2025 Sales


Info of submission


Email:ande