B10H0710N40D
B10H0710N40D
B10H0710N40D
B10H0710N40D
  • Transistors - FETs, MOSFETs - RF B10H0710N40D
  • Transistors - FETs, MOSFETs - RF B10H0710N40D
  • Transistors - FETs, MOSFETs - RF B10H0710N40D
  • Transistors - FETs, MOSFETs - RF B10H0710N40D
B10H0710N40D
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range7001000MHz
PL(1dB)nominal output power at 1 dB gain compression50W
Test signal: Pulsed CW
VDSdrain-source voltage[0]48V
Gppower gainPL = 2.51 W (34 dBm) [0]273135dB
ηDdrain efficiencyPL = 2.51 W (34 dBm) [0]2025%
ηDdrain efficiencyPL = PL(1db) [0]5054%
RLininput return lossPL = 2.51 W (34 dBm) [0]-20-10dB

Data sheet: Work in prgress, stay tuned!

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