B10G2022N10DL
B10G2022N10DL
B10G2022N10DL
B10G2022N10DL
  • Transistors - FETs, MOSFETs - RF B10G2022N10DL
  • Transistors - FETs, MOSFETs - RF B10G2022N10DL
  • Transistors - FETs, MOSFETs - RF B10G2022N10DL
  • Transistors - FETs, MOSFETs - RF B10G2022N10DL
B10G2022N10DL
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range21102170MHz
PL(3dB)nominal output power at 3 dB gain compression9W
Test signal: CW pulsed
VDSdrain-source voltage[0]26V
Gppower gain[0]27.530.5dB
ηDdrain efficiency[0]42.548.5%
RLininput return loss[0]-20-10dB

Data sheet: Work in prgress, stay tuned!

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